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spiedigitallibrary.org
Free-electron laser emission architecture impact on EUV lithography
Laser-produced plasma (LPP) EUV sources have demonstrated approximately 125 W at customer sites, establishing confidence in EUV lithography as a viable manufacturing technology. However, beyond the 7 nm technology node existing scanner/source technology must enable higher-NA imaging systems (requiring increased resist dose and providing half ...
Mar 31, 2017
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7.8K views · 172 reactions | What role does the reticle stage play in High NA extreme ultraviolet (EUV) lithography? In this video, learn how the reticle stage enables patterning in advanced chipmaking. You’ll see how 13.5 nanometer EUV light reflected into the system gets shaped by the illuminator and how a chip pattern gets encoded into the light for lithography. | ASML | Facebook
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