Vishay Intertechnology, Inc. (NYSE: VSH) today introduced five new 1200 V MOSFET power modules designed to increase power ...

Alpha and Omega Semiconductor unveiled its MOS E2 600V Super Junction MOSFET platform. The first high-voltage product from the new platform ...

AOS’ AOTL037V60DE2 600V MOSFET is designed to meet the growing demand for high efficiency and high-power density across a ...

The AOLV66935 designed by Alpha and Omega Semiconductor is a 100V N-channel High Safe Operating Area (SOA) MOSFET ...

Vishay has introduced five new 1200 V MOSFET power modules designed to increase power efficiency for medium to high frequency applications in automotive, energy, industrial, and telecom systems.

SUNNYVALE, Calif.--(BUSINESS WIRE)--Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer, and global supplier of a broad range of power semiconductors, power ICs, and ...

ROHM Co., Ltd. has developed the 100V power MOSFET--RS7P200BM--achieving industry-leading safe operating area (SOA) performance in a 5060-size (5.0mm x 6.0mm) package. This product is ideal for ...

IXYS announced the expansion of its high voltage power MOSFET product line, the 2000 V n-channel power MOSFET featuring 1 A current rating specifically designed for high voltage, high speed power ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch a 50W silicon radio-frequency (RF) high-power metal-oxide semiconductor field-effect ...

The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...

Infineon Technologies AG has launched the StrongIRFET 2, its new generation of power MOSFET technology in 80-V and 100-V devices. Designed to ease product selection and purchasing, these power MOSFETs ...

IXYS' family of 500-V to 1200-V linear power MOSFETs incorporate a cell design that significantly improves ruggedness and power dissipation capabilities. IXYS’ family of 500-V to 1200-V linear power ...