Milpitas, Calif. – Linear Technology introduces the LT4351, an ideal MOSFET diode OR controller that allows for low loss “OR”-ing of multiple power sources with minimal effect on supply voltages. This ...

Cree, Inc. has expanded its design-in support for the C2MT Series SiC MOSFET power devices with the release of a new SPICE model. Fast and accurate, the new model effectively demonstrates the benefits ...

An upgraded structure produces MOSFETs with an exposed metal source on top, providing top-side as well as conventional bottom-side cooling. The ability to improve power dissipation was made possible ...

Metal Oxide Silicon Field Effect Transistors (MOSFETs), Insulated Gate Bipolar Transistors (IGBTs), Bipolar Junction Transistors (BJTs), diodes, and application specific multi-transistor packaged ...

Toshiba Electronics Europe has launched the TPH2R70AR5, a new 100V-rated N-channel power MOSFET. The TPH2R70AR5 is a 100V-rated N-channel power MOSFET Credit: Toshiba Electronics Europe The device has ...

BLOOMINGTON, Minn. & AUSTIN, Texas--(BUSINESS WIRE)--SkyWater Technology (NASDAQ: SKYT) and Applied Novel Devices, Inc. (AND) today announced a major industry breakthrough with new transistor ...

DURHAM, N.C.--(BUSINESS WIRE)--Wolfspeed, Inc. (NYSE: WOLF), the global leader in silicon carbide technology, today introduced its new Gen 4 technology platform, which enables design rooted in ...

As the use of two or more supercapacitor cells becomes prevalent in the design of a variety of battery operated systems, designers are looking for ways to optimize the circuitry around the cells ...

Suppliers of power semiconductors continue to develop and ship devices based on traditional silicon technology, but silicon is nearing its limits and faces increased competition from technologies like ...

Key market opportunities include rising demand in consumer electronics, automotive, and industrial automation sectors, driven ...