This image shows a state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance. Insets ...
This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...
WASHINGTON, D.C., Dec. 15, 2015 - A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE has created gallium nitride (GaN) power diodes capable of ...
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