Advanced Micro Devices has developed two sets of next-generation transistors using different approaches that produce higher levels of performance than conventional transistors, the company said at the ...
Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...
WEST LAFAYETTE, Ind. — Quantum information processing promises to be much faster and more secure than what today’s supercomputers can achieve, but doesn’t exist yet because its building blocks, qubits ...
Key opportunities include the rise of EV production, growth in AI-driven semiconductor control, high-voltage modules for ...
A team of scientists from the Institute for Basic Science has developed a revolutionary technique for producing 1D metallic materials with a width of less than 1 nm by epitaxial growth. Using this ...
Rohm is claiming a first for an 8V-tolerant gate on a 150V GaN power transistor. One of the weaknesses of GaN HEMTs is the low voltage rating of their gates – generally ~6V – leaving them vulnerable ...
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“To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm regime, which require ...
The ability to make a very miniature on/off switch changed the world. These tiny switches, known as transistors, make up the basis of all modern computing—they drive your cell phones, your bank ...
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