US researchers have used modified vertical structures and extreme cooling to push silicon germanium (SiGe) bipolar transistor operation through 500GHz. “The motivation was to use bandgap engineering ...

Also called a "bipolar junction transistor" (BJT), it is one of two major transistor categories; the other is "field-effect transistor" (FET). Although the first transistor was bipolar and the first ...

PLANO, Texas--(BUSINESS WIRE)-- Diodes Incorporated (DIOD) today announces an expansion of its automotive-compliant* bipolar transistor portfolio with the introduction of the DXTN/P 78Q & 80Q series.

In 1947, Shockley, Brattain and Bardeen were investigating the field effect transistor but lead them into inventing the bipolar transistor instead. In 1952, the field effect transistor of Shockley was ...

Microsemi Corp. has reached an agreement with Advanced Power Technology Inc. (APT) for the sale of its low frequency RF bipolar transistor business for $12.2 million in cash, the companies said today.

CHAMPAIGN, Ill. — A new type of transistor structure, invented by scientists at the University of Illinois at Urbana-Champaign, has broken the 600 gigahertz speed barrier. The goal of a terahertz ...

The holiday gave me a chance to play with bipolar transistor mosfet drivers again. And things did not go quite as planned. I had been using the circuit on the right quite happily from a signal ...

Your design task, should you decide to accept it: given an input voltage, square it. Ok, that’s too hard since squaring 8 volts would give you 64 volts, so let’s say the output should be 10% of the ...

If you ever work with a circuit that controls a decent amount of current, you will often encounter a FET – a Field-Effect Transistor. Whether you want to control a couple of powerful LEDs, switch a ...